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| ESH1PA thru ESH1PD New Product Vishay Semiconductors formerly General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers Cas Style SMP Cathode band Features * * * * * * * * Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 25ns 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) Very low profile - typical height of 1.0mm For surface mount application Glass passivated chip junction Ultrafast recovery times for high efficiency Low forward voltage, low power loss High operation temperature up to 175C Built-in strain relief, ideal for automated placement High temperature soldering guaranteed: 260C/10 seconds at terminals * Meets MSL Level 1 per J-STD-020C Dimensions in inches and (millimeters) 0.045 (1.15) 0.033 (0.85) Mechanical Data Case: SMP Terminals: Matte Tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0009 oz., 0.024g Epoxy meets UL 94V-0 flammability rating 0.013 (0.35) 0.004 (0.10) 0.012 (0.30) 0.000 (0.00) 0.018 (0.45) 0.006 (0.15) Mounting Pad Layout 0.012 (0.30) REF 0.105 (2.67) 0.025 (0.635) 0.030 (0.762) 0.053 (1.35) 0.041 (1.05) 0.036 (0.91) 0.024 (0.61) 0.100 (2.54) 0.050 (1.27) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) Maximum Ratings & Thermal Characteristics (TA = 25C unless otherwise noted.) Parameter Device marking code Maximum reverse voltage Maximum average forward rectified current Fig.1 Peak forward surge current 10ms single half sine-wave superimposed on rated load Typical thermal resistance (1) Operating junction and Storage temperature range Symbol VRM IF(AV) IFSM RJA RJL RJC TJ, TSTG ESH1PA ESH1PB ESH1PC PA PB PC 50 100 150 1.0 50 105 15 20 -55 to +175 ESH1PD PD 200 Unit V A A C/W C Electrical Characteristics (TA = 25C unless otherwise noted.) Parameter Symbol Maximum instantaneous forward voltage(2) at IF=0.7A, TJ=25C VF at IF=1A, TJ=25C Maximum reverse current TJ = 25C IR at rated VRM(2) TJ =125C Maximum reverse current at VR = 20V, TJ =150C IR Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A trr Typical reverse recovery time at TJ=25C trr at IF = 1.0A, VR = 30V di/dt = 50A/s, Irr = 10% IRM TJ=100C Typical reverse recovery time at TJ=25C Qrr at IF = 1.0A, VR = 30V di/dt = 50A/s, Irr = 10% IRM TJ=100C Typical junction capacitance at 4.0V, 1MHz CJ Value 0.86 0.90 1.0 25 50 25 25 35 10 15 25 Unit V A A ns ns nC pF Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RJL is measured at the terminal of cathode band. RJC is measured at the top centre of the body (2) Pulse test: 300s pulse width, 1% duty cycle Document Number 88895 23-Sep-04 www.vishay.com 1 ESH1PA thru ESH1PD Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Forward Current Derating Curve 1.2 50 Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.0 0.8 0.6 0.4 TL measured at the cathode band terminal 0.2 0 95 105 115 125 135 145 155 165 175 40 30 20 10 0 1 10 100 Lead Temperature (C) Number of Cycles at 50 HZ Fig. 3 - Typical Instantaneous Forward Characteristics 100 1000 Fig. 4 - Typical Reverse Leakage Characteristics Instantaneous Reverse Current (A) TJ = 175C 100 TJ = 150C 10 TJ = 125C 1 Instantaneous Forward Current (A) 10 TJ = 175C TJ = 150C 1 TJ = 25C 0.1 0.1 TJ = 25C TJ = 125C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance 1000 1000 Fig. 6 - Typical Transient Thermal Impedance Transient Thermal Impedance (C/W) Junction Capacitance (pF) 100 100 10 10 1 0.1 1 10 100 1 0.01 0.1 1 10 100 Reverse Voltage (V) t, Pulse Duration (sec.) www.vishay.com 2 Document Number 88895 23-Sep-04 |
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